SI7949DP-T1-E3 Vishay, SI7949DP-T1-E3 Datasheet - Page 2
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SI7949DP-T1-E3
Manufacturer Part Number
SI7949DP-T1-E3
Description
MOSFET DUAL P-CH 60V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7949DP-T1-E3.pdf
(6 pages)
Specifications of SI7949DP-T1-E3
Transistor Polarity
P-Channel
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
64 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
0.064 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.2 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-5A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
80mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7949DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7949DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7949DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
30
25
20
15
10
b
5
0
0
2
V
a
a
DS
V
Output Characteristics
GS
- Drain-to-Source Voltage (V)
a
= 10 V thru 5 V
J
= 25 °C, unless otherwise noted
4
a
6
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
R
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
8
4 V
3 V
V
V
I
DS
D
DS
≅ - 1 A, V
10
= - 30 V, V
I
= - 60 V, V
V
F
V
V
V
V
V
V
V
GS
I
DS
= - 5 A, dI/dt = 100 A/µs
DS
S
DD
DS
DS
GS
DS
= - 2.9 A, V
Test Conditions
= - 4.5 V, I
= V
= 0 V, V
= - 60 V, V
≥ 5 V, V
= - 30 V, R
= - 10 V, I
= - 15 V, I
GEN
GS
GS
GS
, I
= - 10 V, R
D
= - 10 V, I
GS
GS
= 0 V, T
= - 250 µA
D
GS
D
D
GS
= ± 20 V
L
= - 10 V
= - 4.5 A
= - 5 A
= - 5 A
= 30 Ω
= 0 V
= 0 V
J
= 70 °C
D
g
30
25
20
15
10
= - 5 A
5
0
= 6 Ω
0.0
0.5
1.0
V
Min.
GS
- 25
Transfer Characteristics
- 1
- Gate-to-Source Voltage (V)
1.5
T
C
25 °C
2.0
= 125 °C
0.051
0.064
Typ.
- 0.8
4.5
7.0
7.0
16
26
65
30
41
S09-0223-Rev. B, 09-Feb-09
8
9
2.5
Document Number: 73130
3.0
± 100
0.064
0.080
Max.
- 1.2
- 10
100
- 3
- 1
40
15
15
45
70
- 55 °C
3.5
4.0
Unit
nC
nA
µA
ns
V
A
Ω
S
V
Ω
4.5