SI8901EDB-T2-E1 Vishay, SI8901EDB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8901EDB-T2-E1
• Description: MOSFET BIDIR P-CH 20V 2X3 6-MFP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8901EDB-T2-E1

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1V @ 350µA
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 6-MICRO FOOT®CSP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI8901EDB-T2-E1TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72941
S-82119-Rev. C, 08-Sep-08
0.20
0.16
0.12
0.08
0.04
0.00
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
8
6
4
2
0
0.0
0
0
I
S1S2
On-Resistance vs. Gate-to-Source Voltage
V
= 1 A
0.5
GS
On-Resistance vs. Drain Current
V
1
2
GS
= 1.8 V
V
DS
Output Characteristics
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.0
I
I
D
V
S1S2
GS
- Drain Current (A)
2
4
= 5 thru 2 V
= 5 A
1.5
3
6
2.0
V
V
GS
GS
= 2.5 V
= 4.5 V
4
8
2.5
1.5 V
3.0
10
5
- 0.1
- 0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
- 50
- 50
0.0
On-Resistance vs. Junction Temperature
- 25
- 25
V
I
S1S2
GS
0.4
= 4.5 V
= 1 A
T
V
Transfer Characteristics
0
0
J
GS
- Junction Temperature (°C)
25 °C
Threshold Voltage
T
- Gate-to-Source Voltage (V)
T
J
C
25
25
- Temperature (°C)
= 125 °C
I
0.8
S1S2
50
= 350 µA
50
Vishay Siliconix
Si8901EDB
1.2
75
75
- 55 °C
www.vishay.com
100
100
1.6
125
125
150
150
2.0
3