SI4834BDY-T1-E3 Vishay, SI4834BDY-T1-E3 Datasheet

MOSFET DUAL N-CH 30V 5.7A 8-SOIC

SI4834BDY-T1-E3

Manufacturer Part Number
SI4834BDY-T1-E3
Description
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4834BDY-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
22 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.022 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4834BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72064
S09-0869-Rev. D, 18-May-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
V
V
DS
DS
30
30
(V)
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
G
G
S
S
1
1
2
2
1
2
3
4
Si4834BDY -T1-E3
Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Diode Forward Voltage
0.030 at V
0.022 at V
0.50 V at 1.0 A
Top View
SO-8
R
V
J
a
DS(on)
SD
= 150 °C)
a
GS
(V)
GS
(Ω)
= 4.5 V
= 10 V
(Lead (Pb)-free)
8
7
6
5
a
D
D
D
D
Steady State
Steady State
1
1
2
2
T
T
T
T
A
A
A
A
t ≤ 10 s
a
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
= 25 °C, unless otherwise noted
I
I
D
F
2.0
7.5
6.5
(A)
(A)
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
I
thJA
thJF
DS
GS
D
S
D
stg
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
G
1
Definition
Typ.
Symmetrical Buck-Boost DC/DC Converter
N-Channel MOSFET
52
93
35
MOSFET
10 s
7.5
6.0
1.7
2.0
1.3
S
D
g
1
1
Tested
®
Max.
62.5
110
Power MOSFET
40
- 55 to 150
Schottky Diode
± 20
30
30
Typ.
53
93
35
Steady State
Schottky
5.7
4.6
0.9
1.1
0.7
Vishay Siliconix
G
Si4834BDY
2
Max.
62.5
110
40
N-Channel MOSFET
www.vishay.com
S
D
2
2
Unit
°C/W
Unit
°C
W
V
A
1

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SI4834BDY-T1-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4834BDY -T1-E3 (Lead (Pb)-free) Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4834BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... I - Drain Current (A) D On-Resistance vs. Drain Current 7 Total Gate Charge (nC) g Gate Charge Document Number: 72064 S09-0869-Rev. D, 18-May- 1200 Si4834BDY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 960 720 480 C oss 240 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4834BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 ...

Page 5

... Single Pulse 0. Document Number: 72064 S09-0869-Rev. D, 18-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4834BDY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA - ( ...

Page 6

... Si4834BDY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0 0.01 0.001 0.0001 Temperature (°C) J Reverse Current vs. Junction Temperature Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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