IRF7379QTRPBF International Rectifier, IRF7379QTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7379QTRPBF
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7379QTRPBF

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.8A, 4.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7379QTRPBFCT

6
100
100
10
10
Fig 13. Typical Transfer Characteristics
1
1
Fig 11. Typical Output Characteristics
0.1
4
TOP
BOTTOM - 4.5V
-V
-V
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
5
VGS
DS
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
1
6
T = 25°C
J
7
20µs PULSE WIDTH
T = 25°C
V
20µs PULSE WIDTH
-4.5V
J
DS
T = 150°C
10
J
= -15V
8
9
100
10
A
A
100
0.1
10
100
1
10
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
0.0
1
0.1
TOP
BOTTOM - 4.5V
-V
-V
0.3
SD
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
DS
, Source-to-Drain Voltage (V)
Forward Voltage
, Drain-to-Source Voltage (V)
T = 150°C
J
1
0.6
0.9
T = 25°C
20µs PULSE WIDTH
T = 150°C
-4.5V
J
J
10
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1.2
V
GS
= 0V
100
1.5
A
A