IRF7379QTRPBF International Rectifier, IRF7379QTRPBF Datasheet
IRF7379QTRPBF
Specifications of IRF7379QTRPBF
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IRF7379QTRPBF Summary of contents
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Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET Dual SO- ...
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Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...
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I = 4.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0 Fig 7. Typical On-Resistance ...
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1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C 200 ...
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VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig ...
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I = -3.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 15. Normalized On-Resistance Vs. Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0 Fig 17. Typical On-Resistance Vs. ...
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1MHz iss rss 800 oss ds gd 600 C iss C oss 400 C rss ...
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SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & ...
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SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...