BSO615N G Infineon Technologies, BSO615N G Datasheet - Page 8

• Manufacturer Part Number: BSO615N G
• Description: MOSFET DUAL N-CH 60V 2.6A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615N G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615N G; BSO615NGT; BSO615NGXT; BSO615NT; BSO615NXTINTR; BSO615NXTINTR; SP000216316

2007-02-21
Rev. 1.1
Page 7