ECH8655R-TL-H SANYO, ECH8655R-TL-H Datasheet
ECH8655R-TL-H
Specifications of ECH8655R-TL-H
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ECH8655R-TL-H Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8655R SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
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... Switching Time Test Circuit V DD =10V =4. =2.22Ω D PW=10μs D.C.≤ ECH8655R P.G 50Ω =1kΩ ECH8655R Symbol Conditions R DS (on =4.5A =4. (on =4.5A =4. (on =4.5A =3. (on =2A =2. (on) See specified Test Circuit See specified Test Circuit (off) See specified Test Circuit See specified Test Circuit ...
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... 0.1 0.2 0.3 Drain-to-Source Voltage (on =2. Gate-to-Source Voltage ⏐ fs⏐ =10V 1 0.1 1.0 Drain Current Time -- 1000 100 0.1 1.0 Drain Current ECH8655R =1.0V 0 0.4 0.5 0 IT13155 35 Ta=25 ° --50 IT13157 = 0.001 0.1 0 IT13159 =10V V DS =10V = IT13236 =10V 0.5 1 ...
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... Drain-to-Source Voltage Note on usage : Since the ECH8655R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...