AOP610 Alpha & Omega Semiconductor Inc, AOP610 Datasheet - Page 6

• Manufacturer Part Number: AOP610
• Description: MOSFET N/P-CH COMPL 30V 8-PDIP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOP610

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.7A, 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1143-1; 785-1143-1; 785-1143-5

AOP610
Alpha & Omega Semiconductor, Ltd.
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
70
60
50
40
30
20
100
30
25
20
15
10
90
80
70
60
50
40
30
20
10
5
0
0
0
3
Figure 3: On-Resistance vs. Drain Current and
-10V
Figure 5: On-Resistance vs. Gate-Source Voltage
4
5
V
Fig 1: On-Region Characteristics
1
GS
=-4.5V
5
10
Gate Voltage
2
-V
-V
-I
6
DS
GS
D
-5V
(A)
-6V
(Volts)
(Volts)
15
7
V
3
GS
25°C
-3.5V
=-3V
V
-4V
GS
I
8
=-10V
D
=-6.2A
20
4
125°C
-4.5V
-2.5V
9
25
5
10
1.0E+01
1.0E+00
1.60
1.40
1.20
1.00
0.80
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
25
20
15
10
5
0
0
0
0.0
25
Figure 4: On-Resistance vs. Junction
1
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
0.2
50
125°C
125°C
V
2
Temperature (°C)
DS
V
I
Temperature
D
=-5V
-V
GS
=-6.2A
75
0.4
=-10V
GS
-V
(Volts)
SD
3
100
(Volts)
25°C
25°C
0.6
4
125
V
I
D
GS
=-4A
=-4.5V
150
0.8
5
175
6
1.0