AOP610 Alpha & Omega Semiconductor Inc, AOP610 Datasheet - Page 4

• Manufacturer Part Number: AOP610
• Description: MOSFET N/P-CH COMPL 30V 8-PDIP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOP610

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.7A, 6.2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 630pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Through Hole
• Package / Case: 8-DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1143-1; 785-1143-1; 785-1143-5

Alpha & Omega Semiconductor, Ltd.
N-CH+SCHOTTKY TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
0.1
10
10
8
6
4
2
0
1
0.1
0
0.01
0.1
10
0.00001
1
R
limited
Figure 9: Maximum Forward Biased Safe
DS(ON)
V
I
D
DS
=7.7A
Figure 7: Gate-Charge characteristics
2
=15V
D=T
T
R
J,PK
θJA
Operating Area (Note E)
=55°C/W
on
=T
0.0001
4
/T
1
A
+P
V
DM
DS
Q
.Z
g
(Volts)
1ms
10ms
0.1s
6
(nC)
θJA
.R
Figure 11: Normalized Maximum Transient Thermal Impedance
Single Pulse
θJA
0.001
1s
100µs
10s
DC
10
8
T
T
J(Max)
A
=25°C
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
=150°C
10µs
10
0.01
100
12
Pulse Width (s)
0.1
1000
900
800
700
600
500
400
300
200
100
20
15
10
5
0
0.001
0
Figure 10: Single Pulse Power Rating Junction-to-
0
C
rss
0.01
1
Figure 8: Capacitance Characteristics
5
C
C
oss
iss
P
0.1
D
Ambient (Note E)
10
Pulse Width (s)
T
10
on
V
DS
T
1
(Volts)
15
10
100
20
f=1MHz
V
T
T
GS
J(Max)
A
=25°C
=0V
=150°C
100
25
1000
1000
30