AO4616 Alpha & Omega Semiconductor Inc, AO4616 Datasheet - Page 3
![MOSFET N/P-CH COMPL 30V 8-SOIC](/photos/5/43/54367/ao4616_sml.jpg)
AO4616
Manufacturer Part Number
AO4616
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO4616.pdf
(9 pages)
Specifications of AO4616
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 8.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.1A, 7.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19.2nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1043-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AO4616
Manufacturer:
SILICON
Quantity:
2 500
Part Number:
AO4616
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
AO4616A
Manufacturer:
AO
Quantity:
20 000
Part Number:
AO4616L
Manufacturer:
AOS/万代
Quantity:
20 000
Rev 2: Jan. 2011
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
0
30
25
20
15
10
40
35
30
25
20
15
10
0
0
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics (Note E)
Figure 3: On-Resistance vs. Drain Current and
1
25° C
10V
2
5
V
V
4V
GS
Gate Voltage (Note E)
GS
=4.5V
=10V
V
2
4
DS
V
(Volts)
(Note E)
GS
10
I
D
(Volts)
(A)
3
6
125° C
15
V
3.5V
GS
8
3V
4
=2.5V
I
D
www.aosmd.com
=8A
20
10
5
30
25
20
15
10
1.6
1.4
1.2
0.8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
5
0
1
1
Figure 4: On-Resistance vs. Junction Temperature
0
40
Figure 2: Transfer Characteristics (Note E)
V
0.0
DS
Figure 6: Body-Diode Characteristics (Note E)
=5V
25
1.5
125° C
0.2
125° C
V
I
50
D
GS
=6A
2
Temperature (° C)
=4.5V
V
0.4
GS
(Note E)
75
(Volts)
V
2.5
SD
V
I
D
GS
0.6
=8A
(Volts)
100
=10V
25° C
3
0.8
25° C
125
3.5
17
10
18
1.0
150
5
2
0
AO4616
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