AO4616 Alpha & Omega Semiconductor Inc, AO4616 Datasheet

MOSFET N/P-CH COMPL 30V 8-SOIC

AO4616

Manufacturer Part Number
AO4616
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4616

Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 mOhm @ 8.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.1A, 7.1A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
19.2nC @ 10V
Input Capacitance (ciss) @ Vds
1250pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1043-2

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Rev 2: Jan. 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4616 uses advanced trench technology to provide
excellent R
complementary N and P channel MOSFET configuration
is ideal for low Input Voltage inverter applications.
Top View
DS(ON)
B
and low gate charge. This
C
C
T
T
T
T
Pin1
SOIC-8
A
A
A
A
=25° C
=70° C
=25° C
=70° C
C
A
A D
Bottom View
A
=25° C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
www.aosmd.com
J
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
JA
JL
AR
S2
G2
S1
G1
Top View
Product Summary
N-Channel
V
I
R
< 20m (V
< 28m (V
100% UIS Tested
100% R
Max n-channel
D
ESD Protected
DS
DS(ON)
= 8A (V
= 30V
±20
Typ
6.5
1.3
30
40
19
18
48
74
32
8
2
30V Complementary MOSFET
g
GS
Tested
GS
GS
D2
D2
D1
D1
=10V)
-55 to 150
=10V)
=4.5V)
G2
Max p-channel
n-channel
Max
62.5
±20
-30
-40
1.3
27
36
90
40
-7
-6
2
P-Channel
-30V
-7A (V
R
< 22m (VGS=-10V)
< 40m (VGS=-4.5V)
100% UIS Tested
100% R
DS(ON)
D2
S2
GS
G1
AO4616
=-10V)
g
Tested
p-channel
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A
A
Page 1 of 9
D1
S1

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AO4616 Summary of contents

Page 1

... General Description The AO4616 uses advanced trench technology to provide excellent R and low gate charge. This DS(ON) complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications. SOIC-8 Top View Bottom View Pin1 Absolute Maximum Ratings T =25° C unless otherwise noted ...

Page 2

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4616 Min Typ Max Units 30 1 =55° C ...

Page 3

... Figure 2: Transfer Characteristics (Note E) 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =8A D 1.0E+01 40 1.0E+00 125° C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E- 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4616 125° C 25° 2 (Volts =4. = =10V 100 125 ...

Page 4

... DC 1 0.00001 10 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AO4616 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 1000 Pulse Width (s) ...

Page 5

... DUT Vdd VDC - Vgs t d(on Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds + Vgs Vdd VDC Id - Vgs Diode Recovery Test Circuit & Waveforms Vgs Isd + Vdd VDC - Vds www.aosmd.com AO4616 Qg Qgd Qgs Charge 90% 10 d(off) t off DSS Idt dI/dt I ...

Page 6

... C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4616 Min Typ Max Units -30 -1 =55° C ...

Page 7

... Figure 2: Transfer Characteristics (Note E) 1.6 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-7A D 1.0E+01 40 1.0E+00 1.0E-01 125° C 1.0E-02 1.0E-03 1.0E-04 1.0E- 0.0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4616 125° C 25° (Volts =-10V =-4. =-3. 100 125 ...

Page 8

... 100 0.00001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AO4616 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating ...

Page 9

... Vgs - DUT Vdd VDC + Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Vgs -Isd -I + Vdd VDC - -Vds www.aosmd.com AO4616 Qg Qgd Qgs Charge t off d(off 90% 10 DSS Idt dI/dt -I ...

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