NTZD3152PT1G ON Semiconductor, NTZD3152PT1G Datasheet - Page 4

• Manufacturer Part Number: NTZD3152PT1G
• Description: MOSFET 2P-CH 20V 430MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 175pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.43 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3152PT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
250
200
150
100
100
50
10
0
1
0
1
Figure 9. Resistive Switching Time Variation
V
C
C
GS
ISS
OSS
t
t
d(on)
= 0 V
d(off)
t
t
r
f
Figure 7. Capacitance Variation
5
R
C
vs. Gate Resistance
G
RSS
, GATE RESISTANCE (W)
TYPICAL PERFORMANCE CURVES
10
10
V
I
V
D
15
DD
GS
= −0.215 A
T
= −10 V
= −4.5 V
J
= 25°C
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100
20
4
5
4
3
2
1
0
0
0.6
0.4
0.2
(T
0
Q
0.3
J
GS
0.2
= 25°C unless otherwise noted)
V
T
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
−V
GS
J
−V
= 25°C
0.4
DS
= 0 V
SD
0.4
Q
Q
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
GD
, TOTAL GATE CHARGE (nC)
0.6
0.8
0.5
QT
1
0.6
1.2
1.4
0.7
I
T
D
J
1.6
= −0.215 A
= 25°C
−V
GS
1.8
0.8
2
10
9
8
7
6
5
4
3
2
1
0
0.9