NTZD3152PT1G ON Semiconductor, NTZD3152PT1G Datasheet - Page 2

• Manufacturer Part Number: NTZD3152PT1G
• Description: MOSFET 2P-CH 20V 430MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZD3152PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 430mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 175pF @ 16V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.43 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZD3152PT1GOSTR

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Temperature Coefficient
Temperature Coefficient
Parameter
(T
V
J
V
V
(BR)DSS
Symbol
= 25°C unless otherwise noted.)
V
Q
GS(TH)
R
Q
(BR)DSS
C
C
GS(TH)
t
t
I
C
G(TOT)
Q
I
DS(on)
Q
V
g
d(on)
d(off)
DSS
GSS
G(TH)
t
OSS
RSS
RR
FS
ISS
t
t
GS
GD
SD
r
f
/T
/T
J
J
http://onsemi.com
V
I
V
V
V
V
V
V
GS
S
V
V
V
V
I
V
GS
GS
GS
GS
GS
DS
V
DS
V
D
= −350 mA
GS
GS
DS
GS
= 0 V, dI
GS
GS
= −215 mA, R
= −16 V
= −4.5 V, I
= −2.5 V, I
= −1.8 V, I
= −4.5 V, V
= −4.5 V, V
= −10 V, I
= 0 V,
= 0 V
= 0 V, V
Test Condition
= V
= 0 V, I
= 0 V, f = 1.0 MHz,
2
I
I
V
D
S
DS
DS
= −215 mA
= −350 mA
SD
, I
= −16 V
D
GS
D
/dt = 100 A/ms,
D
D
D
D
= −250 mA
DD
DS
= −250 mA
= −430 mA
= −430 mA
= −300 mA
= −150 mA
= "4.5 V
G
T
= −10 V,
= −10 V,
T
T
= 10 W
J
J
J
= 125°C
= 25°C
= 25°C
−0.45
Min
−20
−1.9
−0.8
Typ
105
0.5
0.6
1.0
1.0
1.7
0.1
0.3
0.4
18
15
10
10
12
35
19
13
"2.0
Max
−1.0
−2.0
−1.0
−1.2
175
0.9
1.2
2.0
2.5
30
20
mV/°C
mV/°C
Unit
nC
mA
mA
pF
ns
ns
W
V
V
S
V