TPCF8303(TE85L,F) Toshiba, TPCF8303(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: TPCF8303(TE85L,F)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8303(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 860pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8303(TE85L,F); TPCF8303FTR

-100
-0.1
-10
-1
-0.1
※ Single pulse
Curves must be derated linearly
with increase in temperature
I D max (pulse) *
Ta = 25℃
Drain-source voltage V DS (V)
1000
100
10
1
Safe Operating Area
0.001
-1
Single pulse
1 ms *
.
0.01
-10
100 µs *
V DSS max
0.1
-100
Pulse width
r
6
th
Device mounted on a glass-epoxy board (a) (Note 2a)
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
– t
1
w
t w (s)
(4)
10
100
(2)
(3)
(1)
1000
TPCF8303
2006-11-16