TPCF8303(TE85L,F) Toshiba, TPCF8303(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPCF8303(TE85L,F)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8303(TE85L,F)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 860pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1.35 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8303(TE85L,F); TPCF8303FTR

100
0.1
10
-5
-4
-3
-2
-1
-6
-5
-4
-3
-1
-2
-0.1
0
0
1
0
0
-4.0
Common source
V DS = -10 V
Pulse Test
-4.5
-5
-0.2
Drain-source voltage
Gate-source voltage
Drain current
-1
-3.5
100
-0.4
-2.5
⎪Y
I
Ta = −55°C
I
D
-3.0
D
fs
– V
– V
⎪ – I
-1
DS
GS
Ta = −55°C
25
-2.0
-0.6
D
I D (A)
25
V GS
V DS
-2
100
Common Source
V DS = -10 V
Pulse Test
Common source
Ta = 25°C
Pulse Test
-0.8
(V)
V GS = -1.4
(V)
-1.6
-1.8
-1.0
-10
-3
4
1000
-1.0
-0.8
-0.6
-0.4
-0.2
100
-10
10
-8
-6
-4
-2
-0.1
0
0
0
0
-4.0
-4.5
Common Source
Ta = 25°C
Pulse Test
-0.75
-5
-6
-0.4
Drain-source voltage
Gate-source voltage V GS
V GS = -1.8V
-2
Drain current I D (A)
R
-1.5
-3.5
-0.8
V
DS (ON)
I
-3.0
DS
D
-2.5
-2.5
-4.5
– V
– V
-4
-1
DS
-2.2
GS
-1.2
– I
V DS
D
Common source
Ta = 25℃
Pulse Test
Common source
Ta = 25°C
Pulse Test
-2.0
V GS = -1.4 V
-6
(V)
-1.6
(V)
I D = -3A
-1.8
-1.6
TPCF8303
2006-11-16
-2.0
-10
-8