SSM6L35FE(TE85L,F) Toshiba, SSM6L35FE(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: SSM6L35FE(TE85L,F)
• Description: MOSFET N-CH/P-CH 20V .18A ES6
• Manufacturer: Toshiba

Specifications of SSM6L35FE(TE85L,F)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 180mA, 100mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 9.5pF @ 3V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: SSM6L35FE(TE85LF)TR

Q1 (N-ch MOSFET)
1000
0.01
100
5000
3000
1000
0.1
10
500
300
100
1.0
0.5
1
50
30
10
0
0
0.1
−50
V GS = 0 V
G
Common Source
t off
t on
t f
t r
Ta = 100°C
Drain–source voltage V
S
Ambient temperature Ta (°C)
D
I
DR
Drain current I
1
0
−0.5
I
DR
V
– V
th
t – I
10
50
– Ta
−25°C
DS
D
25°C
D
−1
Common Source
V DD = 3 V
V GS = 0 to 2.5 V
Ta = 25°C
DS
(mA)
Common Source
I D = 1 mA
V DS = 3 V
100
100
(V)
−1.5
1000
150
5
1000
500
300
100
100
50
30
10
50
10
5
3
1
5
1
1
0.1
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Drain–source voltage V
0.5
Drain current I
10
1
⎪Y
C – V
fs
⎪ – I
DS
5
D
D
100
10
(mA)
Common Source
V DS = 3 V
Ta = 25°C
DS
SSM6L35FE
C oss
C iss
C rss
(V)
2008-03-21
50
1000
100