IRF7306TR International Rectifier, IRF7306TR Datasheet - Page 4

• Manufacturer Part Number: IRF7306TR
• Description: MOSFET 2P-CH 30V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7306TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7306
1 0 0
1000
0 . 1
1 0
800
600
400
200
1
0 . 0
0
1
Fig 7. Typical Source-Drain Diode
Fig 5. Typical Capacitance Vs.
-V
Drain-to-Source Voltage
-V
0 . 3
S D
D S
V
C
C
C
, Source-to-D rain V oltage (V)
Forward Voltage
G S
iss
rs s
os s
, Drain-to-S ource V oltage (V )
C
C
C
T = 1 50 °C
J
iss
o ss
rss
= 0 V,
= C
= C
= C
0 . 6
g s
ds
gd
+ C
+ C
10
gd
g d
f = 1MH z
0 . 9
T = 25°C
J
, C
ds
SH O R TED
1 . 2
V
G S
= 0 V
1 . 5
100
A
A
100
20
16
12
10
8
4
0
1
0
Fig 8. Maximum Safe Operating Area
1
I
V
D
T
T
Single Pulse
DS
C
J
= -3.0 A
= 25 C
= 150 C
Fig 6. Typical Gate Charge Vs.
= -24 V
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
5
Gate-to-Source Voltage
°
G
, Drain-to-Source Voltage (V)
10
BY R
10
DS(on)
FOR TE ST C IR C U IT
15
S EE FIG U R E 12
100us
1ms
10ms
20
25
100
A