IRF7306TR International Rectifier, IRF7306TR Datasheet

MOSFET 2P-CH 30V 3.6A 8-SOIC

IRF7306TR

Manufacturer Part Number
IRF7306TR
Description
MOSFET 2P-CH 30V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7306TR.pdf (9 pages)

Specifications of IRF7306TR

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7306TR
Manufacturer:
IR
Quantity:
6 040
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
IRF7306TRPBF
Manufacturer:
IR
Quantity:
1 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7306TRPBF
Manufacturer:
IR
Quantity:
20 000
Absolute Maximum Ratings
Thermal Resistance Ratings
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
I
I
I
I
P
V
dv/dt
T
D
D
D
DM
R
J,
D
GS
@ T
@ T
@ T
T
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
JA
STG
A
A
A
A
= 25°C
= 25°C
= 70°C
= 25°C
10 Sec. Pulsed Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -10V
@ -10V
GS
@ -10V
G 2
G 1
S 2
S 1
1
2
3
4
To p V ie w
Typ.
–––
HEXFET
8
7
6
5
-55 to + 150
Max.
D1
0.016
D1
D2
D2
-4.0
-3.6
-2.9
-5.0
±20
-14
2.0
S O -8
®
IRF7306
R
Power MOSFET
Max.
62.5
DS(on)
V
DSS
PD - 9.1241C
= -30V
= 0.10
Units
°C/W
Units
W/°C
V/ns
°C
A
W
V
8/25/97

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IRF7306TR Summary of contents

Page 1

... Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...

Page 2

IRF7306 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTT µ LSE W IDTH ° ...

Page 4

IRF7306 1000 iss 800 600 C iss 400 C 200 ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 ...

Page 6

IRF7306 - Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig ...

Page 7

Peak Diode Recovery dv/dt Test Circuit D.U Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V ...

Page 8

IRF7306 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 ...

Page 9

Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 2 .05 (.080) T ERM IN ATIO N 1 .95 (.077 IRE CTIO N 33 0.00 ( 13.000 ...

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