STS4DPF30L STMicroelectronics, STS4DPF30L Datasheet
STS4DPF30L
Specifications of STS4DPF30L
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STS4DPF30L Summary of contents
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... A INTERNAL SCHEMATIC DIAGRAM Parameter = 25°C Single Operation C = 100°C Single Operation C = 25°C Dual Operation = 25°C Single Operation Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed STS4DPF30L - 4A SO-8 PRELIMINARY DATA SO-8 Value Unit ± 2.5 ...
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... STS4DPF30L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient T Thermal Operating Junction-ambient j T Storage Temperature stg (*) When Mounted on 1 inch 2 FR-4 board and t ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current (V ...
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... G GS (Resistive Load, Figure (See test circuit, Figure 2) Test Conditions = 4 4 (Resistive Load, Figure 1) Test Conditions di/dt = 100A/µ 150° (See test circuit, Figure 3) STS4DPF30L Min. Typ. Max. Unit 12 Min. Typ. Max. Unit 125 Min. Typ. Max. Unit 1 1.6 A 3/6 ...
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... STS4DPF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit ...
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... STS4DPF30L inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.050 0.150 0.157 0.050 0.023 0016023 5/6 ...
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... STS4DPF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...