IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7756TRPBF
• Description: MOSFET P-CH DUAL 12V 4.3A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7756TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7756TRPBF; IRF7756TRPBFTR

IRF7756PbF
Fig 11. Typical On-Resistance Vs. Gate
6
0.07
0.06
0.05
0.04
0.03
0.02
Fig 13a. Basic Gate Charge Waveform
V
G
1.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
2.0
Voltage
Charge
Q
Q
GD
G
3.0
I D = -4.3A
4.0
5.0
0.040
0.035
0.030
0.025
0.020
Fig 12. Typical On-Resistance Vs. Drain
Fig 13b. Gate Charge Test Circuit
12V
0
V
GS
Same Type as D.U.T.
Current Regulator
.2µF
4
-I D , Drain Current (A)
50KΩ
-3mA
Current
Current Sampling Resistors
.3µF
I
G
8
D.U.T.
V GS = -1.8V
I
D
V GS = -2.5V
V GS = -4.5V
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12
+
-
V
DS
16