IRF7756TRPBF International Rectifier, IRF7756TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7756TRPBF
• Description: MOSFET P-CH DUAL 12V 4.3A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7756TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 3.4 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 12 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7756TRPBF; IRF7756TRPBFTR

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Notes:
‚
IRF7756PbF
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
I
S
SM
d(on)
r
d(off)
f
rr
DSS
GSS
GS(th)
fs
(BR)DSS
SD
iss
oss
rss
g
gs
gd
rr
Repetitive rating; pulse width limited by
DS(on)
Pulse width ≤ 400µs duty cycle ≤
max. junction temperature.
(BR)DSS
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1400 –––
–––
–––
–––
–––
-12
––– -0.006 –––
–––
13
ƒ
Surface mounted on FR-4 board, ≤ 10sec
–––
––– 0.040
––– 0.058
––– 0.087
–––
–––
–––
–––
––– -100
–––
160
170
310
240
–––
1.8
2.9
12
12
18
35
20
-1.2
–––
-0.9
–––
-1.0
100
–––
–––
–––
–––
–––
–––
-25
2.7
4.4
-17
-1.0
18
53
30
V/°C
µA
nC
nC
ns
pF
ns
nA
V
Ω
V
S
V
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
ƒ = 1.0kHz
showing the
T
D
D
V
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
GS
= -4.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -10V, I
= -9.6V, V
= -9.6V, V
= -8.0V
= 8.0V
= -6.0V
= -4.5V
= -6.0V,
= 0V
= -4.5V ‚
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.0A, V
= -1.0A
D
D
D
= -250µA
GS
GS
= -4.3A
= -4.3A ‚
= -3.4A ‚
= -2.2A ‚
‚
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V
‚
S
D