SP8M4TB Rohm Semiconductor, SP8M4TB Datasheet - Page 4

• Manufacturer Part Number: SP8M4TB
• Description: MOSFET N+P 30V 9A/7A 8-SOIC
• Manufacturer: Rohm Semiconductor

Specifications of SP8M4TB

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A, 7A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9 A, - 7 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Fall Time: 22 ns, 70 ns
• Rise Time: 15 ns, 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP8M4TBTR

Transistors
N-ch
Electrical characteristic curves
10000
0.001
1000
0.01
100
0.1
1000
10
10
100
0.01
1
Fig.4
10
0.0
1
0.1
Fig.1 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
GATE-SOURCE VOLTAGE : V
0.5
Fig.7 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Typical Transfer Characteristics
vs. Drain-Source Voltage
0.1
1.0
DRAIN CURRENT : I
On-State Resistance
vs. Drain Current (Ι)
1.5
2.0
1
1
2.5
3.0
10
V
Pulsed
Ta=25°C
f=1MHz
V
D
DS
V
Pulsed
GS
(A)
GS
GS
=10V
=0V
DS
3.5
=10V
C
C
C
(V)
(V)
iss
oss
rss
100
4.0
10
10000
1000
1000
100
200
150
100
100
10
10
50
1
0.01
1
0
0.1
Fig.2 Switching Characteristics
0
Fig.5 Static Drain-Source
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
t
t
GATE-SOURCE VOLTAGE : V
d (off)
d (on)
Fig.8 Static Drain-Source
t
r
2
t
f
DRAIN CURRENT : I
DRAIN CURRENT : I
On-State Resistance vs.
Gate-Source Voltage
4
On-State Resistance
vs. Drain Current (ΙΙ)
I
I
0.1
D
D
=9A
=4.5A
6
1
8
10
1
D
D
12
Ta=25°C
V
V
R
Pulsed
V
Pulsed
(A)
(A)
Ta=25°C
Pulsed
DD
GS
G
GS
=10Ω
=15V
=10V
GS
=4.5V
14
(V)
10
10
16
0.01
1000
0.1
100
10
10
10
1
0.0
1
9
8
7
6
5
4
3
2
1
0
0.1
Fig.3 Dynamic Input Characteristics
0
Ta=25°C
V
I
R
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
SOURCE-DRAIN VOLTAGE : V
D
DD
G
=9A
Fig.9 Static Drain-Source
Fig.6 Source Current vs.
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
=10Ω
TOTAL GATE CHARGE : Qg (nC)
=15V
5
DRAIN CURRENT : I
Source-Drain Voltage
On-State Resistance
vs. Drain Current (ΙΙΙ)
0.5
10
Rev.A
15
1
SP8M4
1.0
20
D
(A)
V
Pulsed
V
Pulsed
25
GS
SD
GS
=0V
=4V
(V)
4/5
1.5
30
10