SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 5
![MOSFET DUAL P-CH 20V 8-SOIC](/photos/5/42/54289/pkg_5881_sml.jpg)
SI7983DP-T1-E3
Manufacturer Part Number
SI7983DP-T1-E3
Description
MOSFET DUAL P-CH 20V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7983DP-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
7.7A
Vgs(th) (max) @ Id
1V @ 600µA
Gate Charge (qg) @ Vgs
74nC @ 4.5V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8 Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7983DP-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7983DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72637.
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
0.01
0.1
2
1
10
-
4
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
10
-
3
Square Wave Pulse Duration (s)
10
-
2
10
-
1
Vishay Siliconix
Si7983DP
www.vishay.com
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