SI7983DP-T1-E3 Vishay, SI7983DP-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7983DP-T1-E3
• Description: MOSFET DUAL P-CH 20V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7983DP-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.7A
• Vgs(th) (max) @ Id: 1V @ 600µA
• Gate Charge (qg) @ Vgs: 74nC @ 4.5V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8 Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 60A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7983DP-T1-E3TR

Si7983DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
-
-
0.4
0.3
0.2
0.1
0.0
0.1
0.2
0.01
0.1
-
2
1
50
10
-
4
-
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
25
0
Threshold Voltage
T
I
D
J
10
-
= 600 µA
25
Temperature (°C)
-
Single Pulse
3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
1
10
0.1
100
-
Limited by R
2
Safe Operating Area, Junction-to-Ambient
Limited
* V
I
D( on)
125
Single Pulse
GS
T
A
> minimum V
= 25 °C
V
DS
150
DS(on)
Square Wave Pulse Duration (s)
- Drain-to-Source Voltage (V)
10
1
*
-
BVDSS Limited
1
GS
at which R
I
DM
10
DS(on)
Limited
1
50
40
30
20
10
0.001
0
is specified
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
Single Pulse Power, Junction-to-Ambient
0.01
100
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
0.1
DM
JM
- T
t
A
1
Time (s)
= P
S09-0272-Rev. B, 16-Feb-09
t
2
1
DM
Document Number: 72637
Z
th J A
th J A
100
t
t
1
2
(t )
= 68 °C/W
10
100
600
600