ZXMD63N03XTA Diodes Zetex, ZXMD63N03XTA Datasheet

MOSFET 2N-CH 30V 2.3A 8-MSOP

ZXMD63N03XTA

Manufacturer Part Number
ZXMD63N03XTA
Description
MOSFET 2N-CH 30V 2.3A 8-MSOP
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMD63N03XTA

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
135 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
290pF @ 25V
Power - Max
870mW
Mounting Type
Surface Mount
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMD63N03XTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMD63N03XTA
Manufacturer:
DIODES/美台
Quantity:
20 000
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXM63N03
ISSUE 1 - OCTOBER 2005
DEVICE
ZXM63N03NXTA
ZXM63N03NXTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
=30V; R
DS(ON)
REEL SIZE
(inches)
=0.135 ; I
13
7
D
=2.3A
12 embossed
12 embossed
TAPE WIDTH
(mm)
1
QUANTITY
PER REEL
G2
1,000
4,000
S2
D2
ZXMD63N03X
G1
G2
S1
S2
G1
S E M I C O N D U C T O R S
1
Top view
Pin-out
MSOP8
S1
D1
D1
D1
D2
D2

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ZXMD63N03XTA Summary of contents

Page 1

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.135 ; I (BR)DSS DS(ON) DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (V =4.5V =4.5V Pulsed Drain Current (c)(d) Continuous Source Current (Body Diode)(b)(d) Pulsed Source Current (Body Diode)(c)(d) Power Dissipation at T =25°C (a)(d) ...

Page 3

ISSUE 1 - OCTOBER 2005 CHARACTERISTICS 3 ZXMD63N03X ...

Page 4

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On ...

Page 5

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 5 ZXMD63N03X ...

Page 6

ISSUE 1 - OCTOBER 2005 TYPICAL CHARACTERISTICS 6 ZXMD63N03X ...

Page 7

PACKAGE DETAILS PACKAGE DIMENSIONS DIM Millimeters MIN MAX MIN A 0.91 1.11 0.036 A1 0.10 0.20 0.004 B 0.25 0.36 0.010 C 0.13 0.18 0.005 D 2.95 3.05 0.116 e 0.65NOM ...

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