ZXMP3A17DN8TA Diodes Zetex, ZXMP3A17DN8TA Datasheet - Page 4

MOSFET 2P-CH 30V 4.4A 8-SOIC

ZXMP3A17DN8TA

Manufacturer Part Number
ZXMP3A17DN8TA
Description
MOSFET 2P-CH 30V 4.4A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP3A17DN8TA

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15.8nC @ 10V
Input Capacitance (ciss) @ Vds
630pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP3A17DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3A17DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A17DN8
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
g
gs
gd
rr
= 25°C unless otherwise stated).
4
MIN.
-1.0
-30
-0.85
TYP.
1.74
2.87
29.2
8.72
8.28
15.8
1.84
2.80
19.5
16.3
630
113
6.4
78
MAX.
0.070
0.110
-1.0
-1.2
100
UNIT CONDITIONS.
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 1 - OCTOBER 2005
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
V
D
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-250µA, V
=-250 A, V
=-3.2A
=-3.2A
GS
=25°C, I
=25°C, I
=6.0Ω, V
=-30V, V
=-10V, I
=-4.5V, I
=-15V,I
=-15 V, V
=-15V,V
=-15V,V
=0V
= 20V, V
=-15V, I
S
F
D
=-1.7A,
GS
=-2.5A,
D
GS
GS
=-3.2A
D
GS
D
GS
DS
GS
=-3.2A
=-2.5A
=-1A
=-10V
DS
=-5V,
=-10V,
=0V
=0V
= V
=0V,
=0V
GS

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