ZXMP3A17DN8TA Diodes Zetex, ZXMP3A17DN8TA Datasheet

MOSFET 2P-CH 30V 4.4A 8-SOIC

ZXMP3A17DN8TA

Manufacturer Part Number
ZXMP3A17DN8TA
Description
MOSFET 2P-CH 30V 4.4A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMP3A17DN8TA

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15.8nC @ 10V
Input Capacitance (ciss) @ Vds
630pF @ 15V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMP3A17DN8TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3A17DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMP
3A17D
ISSUE 1 - OCTOBER 2005
DEVICE
ZXMP3A17DN8TA
ZXMP3A17DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
Motor Drive
LCD backlighting
= -30V; R
DS(ON)
REEL
13’‘
7
’‘
= 0.070 ; I
WIDTH
12mm
12mm
TAPE
D
QUANTITY
2500 units
PER REEL
= -4.4A
500 units
1
ZXMP3A17DN8
PINOUT
Top view
SO8

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ZXMP3A17DN8TA Summary of contents

Page 1

... Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting ORDERING INFORMATION DEVICE REEL TAPE WIDTH ZXMP3A17DN8TA 7 12mm ’‘ ZXMP3A17DN8TC 13’‘ 12mm DEVICE MARKING ZXMP 3A17D ISSUE 1 - OCTOBER 2005 = -4.4A D QUANTITY PER REEL ...

Page 2

ZXMP3A17DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode)(b) Pulsed Source Current (Body Diode)(c) Power Dissipation at ...

Page 3

R DS(on) 10 Limited 100ms 100m 10ms Single Pulse 1ms T =25°C 10m amb One active die 100m 1 -V Drain-Source Voltage (V) DS Safe Operating Area 110 T =25°C 100 amb One active die 90 80 ...

Page 4

ZXMP3A17DN8 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On ...

Page 5

T = 25° 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25°C 0 Gate-Source Voltage (V) GS Typical Transfer Characteristics 2V -V ...

Page 6

ZXMP3A17DN8 1000 800 600 C ISS C 400 OSS 200 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage TYPICAL CHARACTERISTICS -3. 1MHz 8 ...

Page 7

PACKAGE OUTLINE D Pin 1 Seating Plane e b CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES © Zetex Semiconductors plc 2005 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraße 19 700 Veterans Memorial Hwy D-81673 München Hauppauge, NY 11788 Germany ...

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