SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet

MOSFET DUAL N-CH 20V 1212-8

SI7900AEDN-T1-E3

Manufacturer Part Number
SI7900AEDN-T1-E3
Description
MOSFET DUAL N-CH 20V 1212-8
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI7900AEDN-T1-E3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 8.5A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
16nC @ 4.5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
8.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
36mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
900mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7900AEDN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY
Quantity:
4 189
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7900AEDN-T1-E3
Quantity:
5 250
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
20
(V)
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
8
3.30 mm
D
7
D
Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.026 at V
0.030 at V
0.036 at V
6
PowerPAK 1212-8
D
R
5
DS(on)
Bottom View
J
a
D
= 150 °C)
a
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
1
S1
a
2
G1
3
S2
a
3.30 mm
4
G2
A
I
= 25 °C, unless otherwise noted
D
8.5
Steady State
Steady State
8
7
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New PowerPak
• 3000 V ESD Protection
• Protection Switch for 1-2 Li-ion Batteries
G
Symbol
Symbol
1
T
R
R
J
- Low Thermal Resistance, R
- Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
2.6 kΩ
N-Channel
®
Power MOSFET: 1.8 V Rated
Typical
®
10 s
8.5
6.4
2.9
3.1
1.6
2.2
32
65
Package
D
- 55 to 150
S
1
1
± 12
20
30
Steady State
Maximum
G
thJC
2
0.79
4.3
1.4
1.5
2.8
40
82
Si7900AEDN
Vishay Siliconix
6
2.6 kΩ
N-Channel
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
2
2
1

Related parts for SI7900AEDN-T1-E3

SI7900AEDN-T1-E3 Summary of contents

Page 1

... GS PowerPAK 1212 Bottom View Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free) Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7900AEDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 72287 S-81544-Rev. C, 07-Jul- 0.1 75 100 125 150 Si7900AEDN Vishay Siliconix ° °C 20 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 6 Total Gate Charge (nC) ...

Page 4

... Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.04 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72287. Document Number: 72287 S-81544-Rev. C, 07-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7900AEDN Vishay Siliconix - www.vishay.com 1 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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