SI3900DV-T1-E3 Vishay, SI3900DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3900DV-T1-E3
• Description: MOSFET N-CH DUAL 20V 2.0A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3900DV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3900DV-T1-E3TR

Si3900DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71178.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.01
0.1
- 50
0.1
2
1
2
1
10
10
- 4
-4
0.05
0.05
0.02
0.1
- 25
Duty Cycle = 0.5
0.2
0.1
0.02
Duty Cycle = 0.5
0.2
0
Single Pulse
Threshold Voltage
Single Pulse
T
I
D
J
- Temperature (°C)
= 250 µA
10
25
- 3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
- 2
125
Square Wave Pulse Duration (s)
10
150
Square Wave Pulse Duration (s)
-2
10
- 1
10
1
8
6
4
2
0
0.01
-1
Single Pulse Power, Junction-to-Ambient
0.1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
-
Time (s)
T
A
t
1
1
= P
S09-2275-Rev. D, 02-Nov-09
t
2
DM
Document Number: 71178
Z
1
thJA
thJA
100
t
t
(t)
1
2
= 130 °C/W
10
600
10
30