SI6954ADQ-T1-GE3 Vishay, SI6954ADQ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI6954ADQ-T1-GE3
• Description: BATTERY SW N-CH 30V 3.4A 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6954ADQ-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6954ADQ-T1-GE3TR

Si6954ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?71130.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.01
0.01
- 50
0.1
0.1
2
1
2
1
10
10
-4
- 25
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
Threshold Voltage
T
J
25
- Temperature (°C)
10
Single Pulse
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Normalized Thermal Transient Impedance, Junction-to-Foot
100
10
-2
125
150
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
30
25
20
15
10
10
5
0
-1
-3
Single Pulse Power, Junction-to-Ambient
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
-1
- T
Time (s)
1
t
1
A
= P
S-81221-Rev. C, 02-Jun-08
t
2
Document Number: 71130
DM
1
Z
thJA
100
thJA
t
t
1
2
(t)
10
= 126 °C/W
100
600
10
600