SI6954ADQ-T1-GE3 Vishay, SI6954ADQ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI6954ADQ-T1-GE3
• Description: BATTERY SW N-CH 30V 3.4A 8-TSSOP
• Manufacturer: Vishay

Specifications of SI6954ADQ-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.4A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6954ADQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71130
S-81221-Rev. C, 02-Jun-08
0.15
0.12
0.09
0.06
0.03
0.00
20
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 3.4 A
On-Resistance vs. Drain Current
= 10 V
V
4
SD
2
0.4
Q
- Source-to-Drain Voltage (V)
g
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
T
0.6
8
J
= 150 °C
4
0.8
V
GS
12
= 4.5 V
1.0
T
J
V
6
= 25 °C
GS
16
1.2
= 10 V
1.4
20
8
0.15
0.12
0.09
0.06
0.03
0.00
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
- 25
D
GS
= 3.4 A
= 10 V
2
6
V
V
GS
0
T
DS
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
Capacitance
25
4
12
I
D
C
50
= 3.4 A
Vishay Siliconix
oss
Si6954ADQ
6
18
75
C
iss
www.vishay.com
100
8
24
125
150
10
30
3