SI5515DC-T1-E3 Vishay, SI5515DC-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI5515DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5515DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.4A, 3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 32mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 400mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5515DC-T1-E3TR

Si5515DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.30
0.25
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
0.2
= 3 A
On-Resistance vs. Drain Current
= 10 V
3
V
SD
2
Q
0.4
V
g
- Source-to-Drain Voltage (V)
GS
I
V
- Total Gate Charge (nC)
D
GS
T
- Drain Current (A)
= 1.8 V
Gate Charge
3
J
6
= 150 °C
= 2.5 V
0.6
4
0.8
9
5
T
1.0
V
J
GS
= 25 °C
6
12
= 4.5 V
1.2
7
15
1.4
8
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.3
0.2
0.1
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
- 25
I
D
D
GS
= 3 A
= 0.6 A
= 4.5 V
4
1
V
V
GS
0
T
DS
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
25
Capacitance
8
2
I
C
D
iss
S10-0547-Rev. C, 08-Mar-10
50
= 3 A
Document Number: 72221
12
3
75
100
16
4
125
150
20
5