SIA513DJ-T1-GE3 Vishay, SIA513DJ-T1-GE3 Datasheet - Page 8
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SIA513DJ-T1-GE3
Manufacturer Part Number
SIA513DJ-T1-GE3
Description
MOSFET N/P-CH 20V PWRPAK SC70-6
Manufacturer
Vishay
Datasheet
1.SIA513DJ-T1-GE3.pdf
(12 pages)
Specifications of SIA513DJ-T1-GE3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A, 3.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
8 S, 3.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A @ N Channel or 3.3 A @ P Channel
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA513DJ-T1-GE3TR
SiA513DJ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
8
6
4
2
0
0.0
0
0
I
D
= 3.3 A
V
GS
On-Resistance vs. Drain Current
0.5
V
= 2.5 V
DS
2
V
DS
Q
= 10 V
Output Characteristics
2
g
-
- Total Gate Charge (nC)
1.0
V
D
I
D
GS
r
Gate Charge
i a
- Drain Current (A)
- n
4
= 4.5 V
o t
S -
1.5
4
V
o
u
GS
c r
e
= 5 thru 3 V
6
V
V
o
2.0
DS
a t l
g
= 16 V
e
6
(
) V
8
2.5
2.5 V
1.5 V
2 V
New Product
3.0
10
8
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
C
I
rss
- 25
D
= 2.5 A
0.5
4
V
V
Transfer Characteristics
GS
DS
T
0
J
T
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
= 25 °C
Capacitance
T
25
C
1.0
8
= 125 °C
C
C
oss
50
iss
S-80437-Rev. B, 03-Mar-08
V
Document Number: 70443
GS
1.5
12
75
= 2.5 V
T
C
= - 55 °C
100
V
2.0
16
GS
= 4.5 V
125
2.5
150
20