SIA513DJ-T1-GE3 Vishay, SIA513DJ-T1-GE3 Datasheet - Page 5
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SIA513DJ-T1-GE3
Manufacturer Part Number
SIA513DJ-T1-GE3
Description
MOSFET N/P-CH 20V PWRPAK SC70-6
Manufacturer
Vishay
Datasheet
1.SIA513DJ-T1-GE3.pdf
(12 pages)
Specifications of SIA513DJ-T1-GE3
Transistor Polarity
N and P-Channel
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A, 3.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-70-6 Dual
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
8 S, 3.5 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A @ N Channel or 3.3 A @ P Channel
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIA513DJ-T1-GE3TR
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
0.4
T
D
J
T
= 250 µA
25
- Temperature (°C)
J
= 150 °C
0.6
50
75
0.8
0.01
100
0.1
10
1
0.1
100
T
Limited by
R
J
* V
DS(on)
Safe Operating Area, Junction-to-Ambient
= 25 °C
Single Pulse
T
1.0
A
GS
125
= 25 °C
*
V
minimum V
DS
New Product
150
1.2
- Drain-to-Source Voltage (V)
1
BVDSS Limited
GS
at which R
10
DS(on)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
15
20
10
5
0.001
0
is specified
1 ms
10 ms
100 µs
100 ms
1 s, 10 s
DC
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.4 A
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
Single Pulse Power
2
Pulse (s)
1
Vishay Siliconix
3
SiA513DJ
10
T
www.vishay.com
A
T
= 25 °C
A
4
100
= 125 °C
1000
5
5