DMN601DWK-7 Diodes Inc, DMN601DWK-7 Datasheet - Page 2

• Manufacturer Part Number: DMN601DWK-7
• Description: MOSFET N-CH DL 60V 200MW SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN601DWK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 305mA
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMN601DWK-7-F; DMN601DWK-FDITR; DMN601DWK-FDITR; DMN601DWK-FTR; DMN601DWK-FTR; DMN601DWKDITR

DMN601DWK
Document number: DS30656 Rev. 5 - 2
1.5
0.5
0.2
1.0
0.8
0.6
0.4
2
0
1
-50
0
10
0
V
GS
-25
= 10V
T
Fig. 5 Static Drain-Source On-Resistance
CH
8V
6V
5V
4V
3V
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
DS
1
0
vs. Channel Temperature
I , DRAIN CURRENT (A)
D
25
vs. Drain Current
2
50
3V
75
3
4V
6V
5V
V
I = 1mA
Pulsed
D
DS
100
8V
= 10V
4
125
150
5
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1
2 of 4
0.1
10
1
0
Fig. 4 Static Drain-Source On-Resistance
Fig. 6 Static Drain-Source On-Resistance
Fig. 2 Typical Transfer Characteristics
V
V
GS
GS,
, GATE-SOURCE VOLTAGE (V)
I DRAIN CURRENT (A)
GATE SOURCE VOLTAGE (V)
D
vs. Gate-Source Voltage
,
vs. Drain Current
DMN601DWK
© Diodes Incorporated
December 2007