DMN601DWK-7 Diodes Inc, DMN601DWK-7 Datasheet
DMN601DWK-7
Manufacturer Part Number
DMN601DWK-7
Description
MOSFET N-CH DL 60V 200MW SOT-363
Manufacturer
Diodes Inc
Datasheet
1.DMN601DWK-7.pdf
(4 pages)
Specifications of DMN601DWK-7
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
305mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.305 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN601DWK-7-F
DMN601DWK-FDITR
DMN601DWK-FDITR
DMN601DWK-FTR
DMN601DWK-FTR
DMN601DWKDITR
DMN601DWK-FDITR
DMN601DWK-FDITR
DMN601DWK-FTR
DMN601DWK-FTR
DMN601DWKDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN601DWK-7
Manufacturer:
DIODES
Quantity:
210 000
Part Number:
DMN601DWK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
•
Notes:
DMN601DWK
Document number: DS30656 Rev. 5 - 2
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD Protected up to 2kV
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Pulsed (Note 3)
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Continuous
TOP VIEW
(Note 5)
(Note 1)
www.diodes.com
SOT-363
Symbol
R
BV
V
DS (ON)
I
I
C
1 of 4
|Y
V
C
C
GS(th)
GSS
DSS
oss
SD
rss
DSS
iss
fs
|
EQUIVALENT CIRCUIT PER ELEMENT
Mechanical Data
Gate
•
•
•
•
•
•
•
•
Symbol
Symbol
T
V
j
V
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R
, T
Gate
Protection
Diode
P
DSS
GSS
Min
I
θ JA
1.0
0.5
D
60
80
⎯
⎯
⎯
⎯
⎯
⎯
D
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
STG
Typ
Drain
1.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Source
Max
±10
Body
Diode
2.5
2.0
3.0
1.4
5.0
⎯
⎯
50
25
1
-65 to +150
Unit
ms
μA
μA
pF
pF
pF
Ω
V
V
V
Value
Value
Internal Schematic
±20
305
800
200
625
60
D
S
2
2
V
V
V
V
V
V
V
V
V
f = 1.0MHz
TOP VIEW
GS
DS
GS
DS
GS
GS
DS
GS
DS
G
G
= 60V, V
= 10V, I
=10V, I
= 25V, V
= 0V, I
= ±20V, V
= 10V, I
= 5V, I
= 0V, I
1
2
S
D
Test Condition
1
1
D
D
S
D
D
D
= 10μA
= 0.05A
= 115mA
GS
GS
= 0.2A
DMN601DWK
= 1mA
= 0.5A
DS
= 0V
= 0V
= 0V
© Diodes Incorporated
December 2007
°C/W
Unit
Unit
mW
mA
°C
V
V
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DMN601DWK-7 Summary of contents
Page 1
... DSS ⎯ I DSS ⎯ I GSS V 1.0 GS(th) ⎯ (ON (Note 5) 0 ⎯ C iss ⎯ C oss ⎯ C rss www.diodes.com DMN601DWK Drain Body Diode Source TOP VIEW Internal Schematic Value 60 ±20 305 800 Value 200 °C/W 625 -65 to +150 Typ Max Unit Test Condition ⎯ ...
Page 2
... Document number: DS30656 Rev 10V 1mA D Pulsed 1 0.1 100 125 150 www.diodes.com DMN601DWK V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( Fig. 4 Static Drain-Source On-Resistance vs. Drain Current V GATE SOURCE VOLTAGE (V) GS, Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage December 2007 © Diodes Incorporated ...
Page 3
... V = 10V GS Pulsed CHANNEL TEMPERATURE ( C) CH Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature Ordering Information (Note 6) Part Number DMN601DWK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2005 2006 Code S Month Jan Feb Code 1 2 DMN601DWK Document number: DS30656 Rev ...
Page 4
... Nominal F 0.30 H 1.80 ⎯ 0. 0.25 M 0.10 α 0° All Dimensions Dimensions Value (in mm IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN601DWK Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° 2.5 1.3 0.42 0.6 1.9 0.65 December 2007 © Diodes Incorporated ...