MMBF5457LT1G ON Semiconductor, MMBF5457LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBF5457LT1G
• Description: JFET SS N-CHAN 25V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBF5457LT1G

• Current - Drain (idss) @ Vds (vgs=0): 1mA @ 15V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 500mV @ 10nA
• Input Capacitance (ciss) @ Vds: 7pF @ 15V
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBF5457LT1GOS; MMBF5457LT1GOS; MMBF5457LT1GOSTR

2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Gate−Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Gate Source Voltage
Zero−Gate−Voltage Drain Current (Note 2)
Forward Transfer Admittance (Note 2)
Output Common Source Admittance
Input Capacitance
Reverse Transfer Capacitance
(I
(V
(V
(V
(V
(V
(V
(V
(V
(V
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
= 10 mAdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, I
= 15 Vdc, I
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
= 15 Vdc, V
D
D
DS
DS
DS
GS
GS
GS
GS
GS
= 10 nAdc)
= 100 mAdc)
= 0)
= 0)
= 0, T
= 0)
= 0, f = 1.0 kHz)
= 0, f = 1.0 kHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
Characteristic
A
= 100°C)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
MMBF5457LT1
2
V
Symbol
V
(BR)GSS
I
GS(off)
I
V
|Y
|y
C
C
GSS
DSS
GS
os
rss
iss
fs
|
|
1000
−0.5
Min
−25
1.0
−
−
−
−
−
−
−2.5
Typ
4.5
1.5
10
−
−
−
−
−
−
−200
5000
Max
−1.0
−6.0
5.0
7.0
3.0
50
−
−
mmhos
mmhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
pF
pF