MMBF5457LT1G ON Semiconductor, MMBF5457LT1G Datasheet

JFET SS N-CHAN 25V SOT23

MMBF5457LT1G

Manufacturer Part Number
MMBF5457LT1G
Description
JFET SS N-CHAN 25V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBF5457LT1G

Current - Drain (idss) @ Vds (vgs=0)
1mA @ 15V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
500mV @ 10nA
Input Capacitance (ciss) @ Vds
7pF @ 15V
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBF5457LT1GOS
MMBF5457LT1GOS
MMBF5457LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBF5457LT1G
Manufacturer:
FSC
Quantity:
12 000
Part Number:
MMBF5457LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
MMBF5457LT1
JFET − General Purpose
Transistor
N−Channel
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 4
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Drain−Source Voltage
Drain−Gate Voltage
Reverse Gate−Source Voltage
Gate Current
Total Device Dissipation FR− 5 Board
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Package is Available
(Note 1)
(T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
Preferred Device
Symbol
Symbol
T
V
R
V
J
V
GS(r)
P
, T
I
qJA
DG
DS
G
D
stg
−55 to +150
Value
Max
−25
225
556
1.8
25
25
10
1
mW/°C
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
MMBF5457LT1
MMBF5457LT1G
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
1
6
M
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
GATE
2
3
MARKING DIAGRAM
http://onsemi.com
= Specific Device Code
= Date Code*
= Pb−Free Package
3
1
(Pb−Free)
Package
SOT−23
SOT−23
6 M G
Publication Order Number:
G
SOT−23 (TO−236)
1 DRAIN
2 SOURCE
CASE 318
STYLE 10
3000/Tape & Reel
3000/Tape & Reel
MMBF5457LT1/D
Shipping

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MMBF5457LT1G Summary of contents

Page 1

... D 1.8 mW/°C °C/W R 556 qJA ° −55 to +150 J stg MMBF5457LT1 MMBF5457LT1G †For information on tape and reel specifications, Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 2 SOURCE 3 GATE 1 DRAIN 3 SOT−23 (TO−236) CASE 318 1 STYLE 10 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Gate−Source Breakdown Voltage = 10 mAdc Gate Reverse Current ( Vdc Vdc 100°C) GS ...

Page 3

V V GS(off) 1.0 0.8 0.6 0.4 0 DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 2. Typical Drain Characteristics MMBF5457LT1 TYPICAL CHARACTERISTICS V ...

Page 4

V V GS(off DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 4. Typical Drain Characteristics −5 GS(off ...

Page 5

... 0.95 0.037 0.035 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MMBF5457LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MMBF5457LT1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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