J175,116 NXP Semiconductors, J175,116 Datasheet - Page 2
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J175,116
Manufacturer Part Number
J175,116
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Specifications of J175,116
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
7mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
3V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
125 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
70 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005300116
J175 T/R
J175 T/R
J175 T/R
J175 T/R
Philips Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in a plastic TO-92
envelope and intended for application
with analog switches, choppers,
commutators etc.
A special feature is the
interchangeability of the drain and
source connections.
PINNING
Note: Drain and source are
interchangeable.
QUICK REFERENCE DATA
April 1995
1 =
2 =
3 =
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
V
V
DS
DS
source
gate
drain
= 0.1 V; V
= 15 V; V
amb
= 50 C
GS
GS
= 0
= 0
handbook, halfpage
V
P
R
I
I
GSO
tot
DS on
V
G
DSS
DS
Fig.1 Simplified outline and symbol, TO-92.
2
1
2
3
max.
max.
max.
max.
min.
max.
max.
J174
135
85
20
J175
125
70
MAM388
7
400
30
30
50
g
J176
250
35
Product specification
2
J174; J175;
J176; J177
d
s
J177
300
1.5
20
V
V
mA
mW
mA
mA