J176,126 NXP Semiconductors, J176,126 Datasheet - Page 8
![JFET P-CHAN 30V SOT-54](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
J176,126
Manufacturer Part Number
J176,126
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ176215.pdf
(8 pages)
Specifications of J176,126
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
1V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
250 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
250 Ohms
Drain Source Voltage Vds
30 V
Gate-source Cutoff Voltage
1 V to 4 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Drain Current (idss At Vgs=0)
2 mA to 35 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005310126
J176 AMO
J176 AMO
J176 AMO
J176 AMO
Printed in The Netherlands
© NXP B.V. 2010
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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R77/02/8
Date of release: April 1995