BFR30,215 NXP Semiconductors, BFR30,215 Datasheet - Page 8
![FET N-CHAN 25V SOT-23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BFR30,215
Manufacturer Part Number
BFR30,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR30215.pdf
(13 pages)
Specifications of BFR30,215
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Channel Type
N
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Drain-source Volt (max)
25V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933163480215::BFR30 T/R::BFR30 T/R
NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, full pagewidth
N-channel field-effect transistors
(nV/ Hz)
V
Fig.15 Feedback capacitance as a function of
V
(1) BFR31; I
(2) BFR30; I
DS
DS
e n
(pF)
−0.8
−0.6
−0.4
−0.2
C rs
= 10 V; f = 1 MHz; T
= 10 V; T
10
10
10
−1
10
0
1
4
3
2
10
0
gate-source voltage; typical values.
D
D
amb
= 1 mA.
= 4 mA.
−1
= 25 C.
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
amb
−2
= 25 C.
10
2
−3
−4
V GS (V)
MDA668
−5
10
3
8
10
4
10
5
BFR30; BFR31
(1)
(2)
Product specification
f (Hz)
MDA669
10
6