PMBF4392,215 NXP Semiconductors, PMBF4392,215 Datasheet - Page 5

• Manufacturer Part Number: PMBF4392,215
• Description: MOSFET N-CH 40V 25MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBF4392,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Drain Source Voltage Vds: 40 V
• Gate-source Cutoff Voltage: 5 V
• Gate-source Breakdown Voltage: 40 V
• Maximum Drain Gate Voltage: 40 V
• Continuous Drain Current: 75 mA
• Drain Current (idss At Vgs=0): 25 mA to 75 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Gate-source Voltage (max): -40V
• Drain Current (max): 75mA
• Drain-gate Voltage (max): 40V
• Drain-source Volt (max): 40V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933773800215::PMBF4392 T/R::PMBF4392 T/R

NXP Semiconductors
April 1995
handbook, halfpage
handbook, halfpage
N-channel FETs
(mW)
P tot
300
200
100
V DD
0
0
Fig.4 Power derating curve.
40
10 nF
Fig.3 Test circuit.
50 Ω
80
10 μF
50 Ω
120
DUT
R L
1 μF
160
T amb (°C)
SAMPLING
SCOPE
MDA245
50 Ω
MBK289
200
5
Pulse generator:
t
t
t

Oscilloscope:
R
r
f
p
i


=
=
=
0.01
100 s
0.5 ns
0.5 ns
50 
PMBF4391; PMBF4392;
Product specification
PMBF4393