TF252TH-5-TL-H SANYO, TF252TH-5-TL-H Datasheet

MOSFET N-CH 20V 1MA 3VTFP

TF252TH-5-TL-H

Manufacturer Part Number
TF252TH-5-TL-H
Description
MOSFET N-CH 20V 1MA 3VTFP
Manufacturer
SANYO
Datasheet

Specifications of TF252TH-5-TL-H

Current - Drain (idss) @ Vds (vgs=0)
210µA @ 2V
Drain To Source Voltage (vdss)
20V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Cutoff (vgs Off) @ Id
1V @ 1µA
Input Capacitance (ciss) @ Vds
3.1pF @ 2V
Mounting Type
Surface Mount
Package / Case
3-VTFP
Power - Max
100mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
869-1205-2
Ordering number : ENA0842
TF252TH
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Marking: D
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
High gain : G V =1.0dB typ (V CC =2V, R L =2.2kΩ, Cin=5pF, V IN =10mV, f=1kHz).
Ultrasmall package facilitates miniaturization in end products.
Best suited for use in Electret Condenser Microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-channel Silicon Junction FET
Electret Condenser Microphone
Applications
Symbol
V GDO
Tstg
P D
I G
I D
Tj
SANYO Semiconductors
TF252TH
Conditions
DATA SHEET
70407GB TI IM TC-00000796
Ratings
--55 to +150
100
150
--20
10
No. A0842-1/4
1
Unit
mW
mA
mA
°C
°C
V

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TF252TH-5-TL-H Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TF252TH SANYO Semiconductors N-channel Silicon Junction FET Electret Condenser Microphone ...

Page 2

... Reverse Transfer Capacitance [Ta=25° =2V =2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Total Harmonic Distortion Output Noise Voltage : The TF252TH is classified by I DSS as follows : (unit : * Rank 4 I DSS 140 to 240 210 to 350 Package Dimensions ...

Page 3

... R L =2.2kΩ 1.2 Cin=5pF I DSS : V DS =2V 1.0 0.8 0.6 0.4 0.2 0 --0.2 --0.4 100 150 200 250 300 Zero-Gate Voltage Drain Current, I DSS -- µA TF252TH 400 V DS =2V 350 300 250 200 150 100 50 0 --0.1 0 --0.6 IT12442 --0.60 --0.55 --0.50 --0 ...

Page 4

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2007. Specifications and information herein are subject to change without notice. TF252TH 1.4 1.2 1.0 0.8 ...

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