MMBF4393LT1G ON Semiconductor, MMBF4393LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBF4393LT1G
• Description: TRANS JFET SW N-CHAN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBF4393LT1G

• Current - Drain (idss) @ Vds (vgs=0): 5mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 500mV @ 10nA
• Input Capacitance (ciss) @ Vds: 14pF @ 15V
• Resistance - Rds(on): 100 Ohm
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Power - Max: 225mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Drain Current (idss At Vgs=0): 5 mA to 30 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 30 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Input: 14 pF
• Capacitance, Reverse Recovery: 3.5 pF
• Channel Type: N-Channel
• Current, Gate: 50 mA
• Current, Gate Reverse: 1 nA
• On Resistance: 100 Ohms
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Power Dissipation: 225 mW
• Resistance, Drain To Source On: 100 Ohms
• Resistance, On: 100 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: –65 °C
• Transistor Type: N-Channel
• Voltage, Breakdown, Gate To Source: 30 V
• Voltage, Drain To Gate: 30 V
• Voltage, Drain To Source: 30 V
• Voltage, Gate To Source, Breakdown: 30 V
• Voltage, Gate To Source, Cut-off: –3 V
• Voltage, Gate To Source, Forward: 0.4 V
• Breakdown Voltage Vbr: -30V
• Zero Gate Voltage Drain Current Idss: 5mA To 30mA
• Gate-source Cutoff Voltage Vgs(off) Max: -3V
• Power Dissipation Pd: 225mW
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBF4393LT1GOS; MMBF4393LT1GOS; MMBF4393LT1GOSTR

1000
1000
500
200
100
500
200
100
5.0
2.0
1.0
5.0
2.0
1.0
50
20
10
50
20
10
0.5
0.5
0.7
0.7
Figure 1. Turn−On Delay Time
Figure 3. Turn−Off Delay Time
1.0
1.0
R
K
= R
2.0
R
2.0
R
I
K
D
I
K
D
D'
= 0
, DRAIN CURRENT (mA)
, DRAIN CURRENT (mA)
= 0
R
3.0
3.0
K
= R
D'
5.0
5.0
7.0
7.0
MMBF4391
MMBF4392
MMBF4393
MMBF4391
MMBF4392
MMBF4393
10
10
T
T
J
J
= 25°C
= 25°C
V
20
V
20
GS(off)
GS(off)
TYPICAL CHARACTERISTICS
30
30
= 7.0 V
= 5.0 V
= 7.0 V
= 5.0 V
= 12 V
= 12 V
50
http://onsemi.com
50
3
1000
1000
500
200
100
500
200
100
5.0
2.0
1.0
5.0
2.0
1.0
50
20
10
50
20
10
0.5
0.5
0.7
0.7
1.0
1.0
R
R
R
K
K
K
= 0
= R
= R
2.0
2.0
I
D
Figure 2. Rise Time
R
Figure 4. Fall Time
, DRAIN CURRENT (mA)
D'
I
D'
K
D
= 0
, DRAIN CURRENT (mA)
3.0
3.0
5.0
5.0
7.0
7.0
MMBF4391
MMBF4392
MMBF4393
MMBF4391
MMBF4392
MMBF4393
10
10
T
T
J
J
= 25°C
= 25°C
V
V
20
20
GS(off)
GS(off)
30
30
= 7.0 V
= 5.0 V
= 7.0 V
= 5.0 V
= 12 V
= 12 V
50
50