MMBF4393LT1G ON Semiconductor, MMBF4393LT1G Datasheet

MMBF4393LT1G

Manufacturer Part Number

MMBF4393LT1G

Description

TRANS JFET SW N-CHAN 30V SOT23

Manufacturer

ON Semiconductor

Datasheet

1.MMBF4391LT1G.pdf (6 pages)

Specifications of MMBF4393LT1G

Current - Drain (idss) @ Vds (vgs=0)

5mA @ 15V

Drain To Source Voltage (vdss)

30V

Fet Type

N-Channel

Voltage - Breakdown (v(br)gss)

30V

Voltage - Cutoff (vgs Off) @ Id

500mV @ 10nA

Input Capacitance (ciss) @ Vds

14pF @ 15V

Resistance - Rds(on)

100 Ohm

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Power - Max

225mW

Configuration

Single

Transistor Polarity

N-Channel

Drain Source Voltage Vds

30 V

Gate-source Breakdown Voltage

30 V

Drain Current (idss At Vgs=0)

5 mA to 30 mA

Maximum Operating Temperature

+ 150 C

Maximum Drain Gate Voltage

30 V

Minimum Operating Temperature

- 55 C

Mounting Style

SMD/SMT

Capacitance, Input

14 pF

Capacitance, Reverse Recovery

3.5 pF

Channel Type

N-Channel

Current, Gate

50 mA

Current, Gate Reverse

1 nA

On Resistance

100 Ohms

Package Type

SOT-23 (TO-236)

Polarization

N-Channel

Power Dissipation

225 mW

Resistance, Drain To Source On

100 Ohms

Resistance, On

100 Ohms

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

–65 °C

Transistor Type

N-Channel

Voltage, Breakdown, Gate To Source

30 V

Voltage, Drain To Gate

30 V

Voltage, Drain To Source

30 V

Voltage, Gate To Source, Breakdown

30 V

Voltage, Gate To Source, Cut-off

–3 V

Voltage, Gate To Source, Forward

0.4 V

Breakdown Voltage Vbr

-30V

Zero Gate Voltage Drain Current Idss

5mA To 30mA

Gate-source Cutoff Voltage Vgs(off) Max

-3V

Power Dissipation Pd

225mW

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

MMBF4393LT1GOS
MMBF4393LT1GOS
MMBF4393LT1GOSTR

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Current page: 1 of 6
Download datasheet (128Kb)

MMBF4391LT1G,

MMBF4392LT1G,

MMBF4393LT1G

JFET Switching Transistors

N−Channel

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 0.75 0.062 in.

March, 2011 − Rev. 8

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Drain−Source Voltage

Drain−Gate Voltage

Gate−Source Voltage

Forward Gate Current

Total Device Dissipation FR− 5 Board

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

Compliant

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Note 1) T

Derate above 25°C

Characteristic

= 25°C

Rating

Symbol

G(f)

, T

qJA

stg

−55 to +150

Value

Max

225

556

1.8

mW/°C

mAdc

°C/W

Unit

Vdc

°C

See detailed ordering, marking and shipping information in the

package dimensions section on page 2 of this data sheet.

MARKING & ORDERING INFORMATION

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

GATE

XXX = Specific Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code*

= Pb−Free Package

CASE 318

STYLE 10

XXX M G

SOT−23

Publication Order Number:

1 DRAIN

2 SOURCE

MMBF4391LT1/D

Related parts for MMBF4393LT1G

MMBF4393LT1G Summary of contents

Page 1

... MMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G JFET Switching Transistors N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage Forward Gate Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 25° ...

Page 2

... Vdc −12 Vdc 1.0 MHz ORDERING INFORMATION Device MMBF4391LT1G MMBF4392LT1G MMBF4393LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ...

Page 3

T = 25°C 500 J MMBF4391 200 MMBF4392 MMBF4393 100 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7 DRAIN CURRENT (mA) D ...

Page 4

SET DS(off) INPUT GEN GEN GG INPUT PULSE R > ≤ 0. ≤ 0.5 ns ...

Page 5

T = 25°C channel DS(on GS(off 100 110 120 130 140 150 I ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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