PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet - Page 9

• Manufacturer Part Number: PMBFJ310,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ310,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2083-2; 934009000215; PMBFJ310 T/R

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 16. Gate current as a function of junction temperature; typical values.
Fig 17. Input admittance; typical values.
g
(mS)
is ,
10
10
b
10
is
1
2
1
V
10
DS
= 10 V; I
I
(pA)
GSS
D
10
10
10
10
= 10 mA; T
10
1
4
3
2
1
25
10
2
amb
b
g
is
is
= 25 C.
f (MHz)
PMBFJ308; PMBFJ309; PMBFJ310
25
mcd228
10
Rev. 03 — 23 July 2004
3
75
Fig 18. Forward transfer admittance; typical values.
g
fs
(mS)
, b
10
10
fs
1
2
V
10
DS
= 10 V; I
N-channel silicon field-effect transistors
125
D
= 10 mA; T
T
j
( C)
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
mcd231
2
amb
g
b
fs
fs
175
= 25 C.
f (MHz)
mcd227
10
3
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