PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet - Page 7
![JFET N-CHAN DUAL 25V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
PMBFJ620,115
Manufacturer Part Number
PMBFJ620,115
Description
JFET N-CHAN DUAL 25V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ620115.pdf
(13 pages)
Specifications of PMBFJ620,115
Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
2 N-Channel (Dual)
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
190mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2084-2
934057915115
PMBFJ620 T/R
934057915115
PMBFJ620 T/R
Philips Semiconductors
9397 750 13006
Product data sheet
Fig 10. Drain current as a function of gate-source voltage; typical values.
Fig 11. Gate current as a function of drain-gate voltage; typical values.
V
T
j
DS
= 25 C.
= 10 V; T
I
( A)
(pA)
GSS
I
10
10
10
10
D
j
10
10
10
10
10
= 25 C.
10
10
1
1
3
2
1
2
3
4
3
2
1
2.5
0
2.0
4
Rev. 01 — 11 May 2004
1.5
8
1.0
12
Dual N-channel field-effect transistor
I
0.5
D
= 10 mA
100 A
I
V
1 mA
GSS
DG
V
GS
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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