BUP314D Infineon Technologies, BUP314D Datasheet - Page 6

• Manufacturer Part Number: BUP314D
• Description: IGBT 1200V 42A W/DIODE DUO-PK
• Manufacturer: Infineon Technologies

Specifications of BUP314D

• Package / Case: TO-218AB/5
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 25A
• Current - Collector (ic) (max): 42A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 42 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Request inventory verification / Request inventory verification
• Other names: BUP314DIN

Typ. switching losses
E = f ( I
Infineon
Typ. switching time
I = f ( I
par.: V
Semiconductor Group
par.: V
E
t
mWs
10
10
10
C
10
ns
C
CE
8
7
6
5
4
3
2
1
0
) , inductive load , T
CE
) , inductive load , T
3
2
1
0
0
= 600 V, V
= 600 V, V
10
10
20
20
GE
GE
= ± 15 V, R
= ± 15 V, R
30
30
j
j
= 125°C
= 125°C
40
40
G
G
= 47
= 47
A
A
Eon
Eoff
I
tdoff
tdon
tf
C
tr
I
C
60
60
6
Typ. switching losses
E = f ( R
Typ. switching time
t = f ( R
par.: V
par.: V
E
t
mWs
10
10
10
10
ns
CE
8
7
6
5
4
3
2
1
0
G
G
CE
3
2
1
0
0
) , inductive load ,
) , inductive load , T
= 600V, V
= 600 V, V
20
20
40
40
60
GE
60
GE
= ± 15 V, I
80
80
= ± 15 V, I
T
100 120 140
100 120 140
j
j
= 125°C
= 125°C
C
C
BUP 314D
= 25 A
= 25 A
Jul-30-1996
Eon
Eoff
R
tdoff
tdon
tr
tf
R
G
G
180
180