STGW33IH120D STMicroelectronics, STGW33IH120D Datasheet - Page 4

• Manufacturer Part Number: STGW33IH120D
• Description: IGBT 30A 1200V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW33IH120D

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-8440-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
1. Pulsed: pulse duration= 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
= 25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
GE
= 0)
= 0)
Parameter
Parameter
CE
= 0)
I
V
V
V
V
V
V
V
V
I
C
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
= 20 A,V
= 1 mA
= V
= 15 V, I
= 15 V, I
=1200 V
=1200 V, Tc=125 °C
=± 20 V
= 25 V
= 25 V, f = 1 MHz, V
= 960 V,
Test conditions
GE
Test conditions
, I
GE
,
C
I
C
C
C
= 1 mA
= 20 A
= 20 A, Tc =125 °C
=15 V
= 20 A
GE
=0
Min.
1200
Min. Typ. Max. Unit
3.75
2900
Typ. Max.
162
127
30
18
50
STGW33IH120D
2.2
2.0
20
5.75
500
100
2.8
10
±
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S