IRG4RC10UTR International Rectifier, IRG4RC10UTR Datasheet
IRG4RC10UTR
Specifications of IRG4RC10UTR
Available stocks
Related parts for IRG4RC10UTR
IRG4RC10UTR Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than ...
Page 2
IRG4RC10U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
Page 3
are w ave: 2 rate lta 1.0 Ide des 0.0 0.1 Fig Typical Load Current vs. Frequency 100 o T ...
Page 4
IRG4RC10U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...
Page 5
1MHz ies res 400 oes ies 300 200 C oes 100 C res ...
Page 6
IRG4RC10U 1.0 100 R = 100Ohm 150 C ° 480V 15V 0.8 GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical ...
Page 7
Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50 5.46 (.2 15 ...
Page 8
IRG4RC10U Tape & Reel Information TO-252AA ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...